?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet qfet ? january 2006 fqn1n50c 500v n-channel mosfet features ? 0.38 a, 500 v, r ds(on) = 6.0 ? @ v gs = 10 v ? low gate charge ( typical 4.9 nc ) ? low crss ( typical 4.1 pf) ? fast switching ? 100 % avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fa irchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switched mode power s upplies, active power factor correction, electronic lamp ballasts based on half bridge topology. to-92 fqn series s d g d g s absolute maximum ratings symbol parameter fqn1n50c units v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 0.38 a - continuous (t c = 100c) 0.24 a i dm drain current - pulsed (note 1) 3.04 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 44.4 mj i ar avalanche current (note 1) 0.38 a e ar repetitive avalanche energy (note 1) 0.21 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25c) 0.89 w power dissipation (t l = 25c) 2.08 w - derate above 25c 0.017 w/ c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c thermal characteristics symbol parameter typ max units r jl thermal resistance, junction-to-lead (note 6a) -- 60 c / w r ja thermal resistance, junction-to-ambient (note 6b) -- 140 c / w
2 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity 1n50c fqn1n50c to-92 -- -- 2000ea electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 50 a v ds = 400 v, t c = 125c -- -- 250 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 0.19 a -- 4.6 6.0 ? g fs forward transconductance v ds = 40 v, i d = 0.19a (note 4) -- 0.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 150 195 pf c oss output capacitance -- 28 40 pf c rss reverse transfer capacitance -- 4.1 -- pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 1.0 a, r g = 25 ? (note 4, 5) -- 10 30 ns t r turn-on rise time -- 10 30 ns t d(off) turn-off delay time -- 20 50 ns t f turn-off fall time -- 15 40 ns q g total gate charge v ds = 400 v, i d = 1.0 a, v gs = 10 v (note 4, 5) -- 4.9 6.4 nc q gs gate-source charge -- 0.66 -- nc q gd gate-drain charge -- 2.9 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 0.38 a i sm maximum pulsed drain-source diode forward current -- -- 3.04 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.38 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 1.0 a, di f / dt = 100 a/ s (note 4) -- 188 -- ns q rr reverse recovery charge -- 0.55 -- c notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 80mh, i as = 1.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 0.38a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature 6. a) reference point of the r jl is the drain lead b) when mounted on 3?x4.5? fr-4 pcb without any pad copper in a still air environment (r ja is the sum of the junction-to-case and case-to-ambient thermal resistance. r ca is determined by the user?s board design)
3 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 246810 10 -1 10 0 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 0123456 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v note : i d = 1a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 100 200 300 400 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 not es : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 0.19 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 notes : 1. z jl (t) = 60 /w m ax. 2. d uty factor, d = t 1 /t 2 3. t jm - t l = p dm * z qjc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
5 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fqn1n50c rev. a fqn1n50c 500v n-channel mosfet mechanical dimensions 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92 dimensions in millimeters
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careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging fqn1n50c 500v n-channel mosfet general description back to top features back to top contents ? general description ? features ? product status/pricing/packaging ? order samples ? qualification support these n-channel enhancement mode pow er field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin g performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi ciency switched mo de power supplies, active power facto r correction, electronic lamp ballasts based on half bridge topology. z 0.38 a, 500 v, r ds(on) = 6.0 ? @ v gs = 10 v z low gate charge ( typical 4.9 nc ) z low crss ( typical 4.1 pf) z fast switching z 100 % avalanche tested z improved dv/dt capability datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n fq n1n50c - 500v n-channel mosfet 17-au g -2007 mhtml:file://c:\temp\FQN1N50CBU.mht
back to top qualification support click on a product for detailed qualification data back to top FQN1N50CBU full production $0.316 to - 92 3 bulk line 1: 1n50c line 2: &3 fqn1n50cta full production $0.316 to - 92 3 ammo line 1: 1n50c line 2: &3 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fqn1n50c is available. click here for more information . product FQN1N50CBU fqn1n50cta ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n fq n1n50c - 500v n-channel mosfet 17-au g -2007 mhtml:file://c:\temp\FQN1N50CBU.mht
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